Abstract

The need for higher brightness electron sources with improved coherence has been appreciated for some time by electron microscopists and electron optical manufacturers. The results given in this paper suggest that changes in these electron source characteristics can be expected to influence the image quality of lattice defects taken under two-beam dynamical conditions in thick crystals.In this study stacking faults and bounding partial dislocations in silicon were imaged at various crystal thicknesses using JEM 200 electron microscopes operated at 200 kV. linages were, obtained using microscopes equipped with a normal Wehnelt grid assembly and a modified assembly. In both cases a standard hair-pin filament was used. The modified Wehnelt assembly (so-called Cool beam assembly) differs from the normal one both in shape and filament position.

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