Abstract
To explore the origin of low conversion efficiency of GaAsN solar cells, the effects from a key deep level (E1) at about 0.3–0.4 eV below the conduction band and interface states between the GaAsN emitter and GaAs front surface field layer were investigated by numerical simulation. Our results show that a high deep level concentration in GaAsN layers and a large interface recombination velocity are necessary to fit the experimental data. Interface recombination plays an important role in reducing the quantum efficiency in the short-wavelength region. Its effect can be weakened by applying a thin emitter and a high doping level in the GaAs surface field layer. The abundant existence of E1 is responsible for the high contribution of Shockley–Read–Hall recombination from the space-charged region. Its density should be reduced to <1015 cm−3 for higher conversion efficiency.
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