Effects of A-elements (A[dbnd]Si, Ge or Sn) on the structure and electrical contact properties of Ti–A–C–Ag nanocomposites

Abstract

Ti–A–C–Ag (A is Si, Ge or Sn) nanocomposite coatings have been deposited by dc magnetron sputtering in an ultra high vacuum chamber. Electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction show that all coatings contain nanocrystalline TiC and Ag grains in a matrix of mainly amorphous C. A C/Ti ratio above unity yields a homogenous distribution of Ag with a reduced grain size. From a chemical point of view, the addition of Ge and Sn to the Ti–C–Ag system should increase the conductivity of the coatings since the formation of more metallic phases than Si. We demonstrate that Si can be replaced with Ge and Sn and still yield a homogeneous distribution of Ag. The incorporation of Ge and Sn to the Ti–C–Ag system results in elemental precipitation and intermetallic phases, respectively. This gives improved electrical properties compared to Ti–Si–C–Ag coatings, and a contact resistance at loads of ~1N against an Au probe (radius of 0.7mm) that is comparable to that of Ag.