Abstract
Effects of artificial defects on 2H-NbSe2 single crystals introduced by 800 MeV Xe irradiation with a dose equivalent matching field B Φ up to 8 T were studied. The bulk magnetization measurements performed by a commercial SQUID magnetometer reveal strong enhancement of critical current density in NbSe2 after introducing defects by 800 MeV Xe irradiation. T c is found to be robust against the 800 MeV Xe irradiation, while c-axis lattice parameter shows an obvious increase with increasing B Φ.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
