Abstract
Current–voltage, capacitance–voltage and conventional deep level transient spectroscopy at temperature ranges from 40 to 300K have been employed to study the influence of alpha-particle irradiation from an 241Am source on Ni/4H–SiC Schottky contacts. The nickel Schottky barrier diodes were resistively evaporated on n-type 4H–SiC samples of doping density of 7.1×1015cm−3. It was observed that radiation damage caused an increase in ideality factors of the samples from 1.04 to 1.07, an increase in Schottky barrier height from 1.25 to 1.31eV, an increase in series resistance from 48 to 270Ω but a decrease in saturation current density from 55 to 9×10−12Am−2 from I–V plots at 300K. The free carrier concentration of the sample decreased slightly after irradiation. Conventional DLTS showed peaks due to four deep levels for as-grown and five deep levels after irradiation. The Richardson constant, as determined from a modified Richardson plot assuming a Gaussian distribution of barrier heights for the as-grown and irradiated samples were 133 and 151Acm−2K−2, respectively. These values are similar to literature values.
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