Abstract
In this paper, effects of 160keV electron irradiated “Panda” type Polarization-Maintaining optical fiber at 1310nm are investigated by us. Attenuation coefficient induced in optical fiber by electron beams at 1310nm increases with increase in electron fluence. Electron irradiation-induced damage mechanism are studied by means of CASINO simulation program, the X-ray photoelectron spectroscopy (XPS), electron spin resonance spectrometer (EPR) and Fourier transform infrared spectroscopy (FTIR). The results show that Si-OH impurity defect concentration is the main reason of increasing attenuation coefficient at 1310nm.
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