Abstract
γ-ray irradiation effects on ferroelectric properties of (Bi0.85Pr0.15)(Fe0.95Mn0.05)O3 (BPFMO) thin films are investigated by pizeoresponse force microscopy and polarization–voltage hysteresis measurements. The irradiated BPFMO thin-film capacitors show reduced polarizations and imprinted hysteresis loops. The loss of nonvolatile polarization increases with the decrease of polarization values prior to the irradiation and the imprint of hysteresis loops depends on the direction of polarization. These are discussed in terms of separation of γ-ray-excited electron–hole pairs by the depolarization field and subsequent charge trapping and aggregation on charged domain walls in BPFMO thin films.
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