Abstract

In this work, in order to reduce the sintering temperature of BaTiO3-based ceramic and synchronously maintain excellent dielectric properties, submicron and nanosized ZnO-B2O3-Bi2O3 (ZBB) additives were co-doped to produce BaTiO3-based ceramics at medium temperature (1150°C). The concerted mechanism on the dielectric properties of different proportion of submicron and nanosized ZBB additive in BaTiO3-based X8R ceramics was investigated systematically. Complex impedance spectra and the calculated activation energy of the grain boundary results showed excess nanosized additive diffuse into the lattice of BaTiO3, which result in poor dielectric properties and low density. Resulting BaTiO3-based ceramics co-doped submicron additive and nanosized additive in a proportion of 2 to 1 exhibited sufficient relative density and ideal X8R performance with high dielectric constant (εr = 3460 at 1kHz and room temperature) low dielectric loss tanδ < 1.1%, which exhibits wide application prospect in electro-magnetic interference filter.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call