Abstract
AbstractA technique is described for direct measurement of evaporation of Ga and As from capped GaAs during RTP. Application of this method to the study of Si, SiO2, and Si3N4 caps with thicknesses of 20 nm to 60 nm provides a direct measure of the temperature ranges for which the caps are able to prevent evaporation during RTP. In addition, kinetic studies of the evaporation at slightly higher temperatures provides information useful for establishing the predominant evaporation mechanism. For the encapsulants studied, these measurements indicate that the observed evaporation is due to formation of cracks in the film during the initial 10 sec of RTP.
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