Abstract
In this paper, nickel–aluminum (Ni1-xAlx) alloys were employed for Al incorporation in nickel silicide (NiSi) and nickel germanide (NiGe) metal gates [denoted by Ni(Al)Si and Ni(Al)Ge, respectively] to achieve n-channel metal–oxide–semiconductor (NMOS) work function Φm tunability. A higher annealing temperature during gate formation was found to increase Al concentration at the gate/dielectric interface. The presence of low Φm Al at the gate/dielectric interface reduces the NiSi and NiGe Φm by ∼0.2 and ∼0.6 eV, respectively. However, the saturation in both Ni(Al)Si and Ni(Al)Ge gate Φm at ∼4.4 eV is due to Fermi-pinning from the formation of interfacial Al2O3 which prevented a further lowering in Φm to that of pure Al (∼4.1–4.3 eV).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
