Abstract
Halide double perovskite Cs2AgBiBr6 hinders its wide range of optoelectronic applications due to large band gap. This work focuses on Sb3+/In3+ doping to tune the band gap of Cs2AgBiBr6 thin films. The influences of annealing temperature and doping amount of Cs2Ag(BxBi1-x)Br6(B = Sb3+, In3+) thin films were investigated. When annealed at the optimized temperature of 150 °C, the Cs2Ag(BxBi1-x)Br6(B = Sb3+, In3+) thin films accommodate up to 100% Sb3+ and 70% In3+, respectively, without showing any secondary phases. The band gap of Cs2Ag(BxBi1-x)Br6(B = Sb3+, In3+) thin films decreases as the increase of Sb3+ and increases as the increase of In3+ amount. Therefore, the band gap regulation of 0.39 eV is realized, with the smallest value of 2.25 eV for Cs2AgSbBr6 and highest value of 2.64 eV for Cs2Ag0.3In0.7Br6, respectively. Our work confirms an approach to realize band gap adjustment of Cs2AgBiBr6 thin films.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
