Effectively Suppressed Short Channel Effects Use Nitrogen-Passivated of Ingaas Gate-All-Around Mosfets for High Switching Speed Logic Application

Abstract

In this paper, we have fabricated an In0.53Ga0.47As gate-all-around field-effect-transistor (GAAFET) used N2 remote-plasma passivated. Transistors with Nitrogen passivated effectively suppressed short channel effect compared the controlling sample. We not only used the Nitrogen passivated but also fabricated the 9 nm top width and the near vertical sidewall of the GAA structure to enhance the gate controllability efficiency. In our results, subthreshold swing (SS) decreases from 81 to 66 mV/dec, drain induced barrier lowing (DIBL) reduces from 100 to 42 mV/V. In-situ N2 post remote plasma passivated is implemented to improve the interface of the high-k and semiconductor to suppress the short channel effect. In0.53Ga0.47As GAA FET with the Nitrogen-passivated is a promising candidate for low-power high switching speed logic application.