Abstract
In this letter, an ion implantation approach to engineer the effective work function is discussed and an empirical model to explain the mechanisms of work function change is proposed. It is shown that by doping a TiN/HfSiOx stack with La and F, a silicon conduction band edge and valence band edge metal effective work function of 3.8 and 5.4 eV, respectively, can be achieved. The empirical correlation of the achieved effective work function to the electronegativity of the dopant element is explained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
