Abstract
A highly efficient (>40%) ARC less dual junction solar cell is designed with low band gap GaSb. Use of GaSb as the bottom cell increases the spectral response of the cell up to 1800 nm. The simulation is performed by using Silvaco ATLAS device simulator under 1 and 1000 sun respectively. A detail discussion on obtained results like electric field generated, potential developed, photon’s generated in each layer, quantum efficiency and spectral response of the cell are provided in the result and discussion section. Other important parameters of the cell like open circuit voltage, short circuit current density, fill factor and efficiency are compared with previously reported results. This model shows an enhancement of 7.9% in its performance as compared to other reports.
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