Abstract
A streaming model (high field) analysis is given for the average energy for and the probability of electron-hole pair production in a semiconductor when a quadratically energy dependent impact ionization cross-section exists above a threshold energy and competes with a nonpolar optical phonon scattering mechanism. A power series expansion method and tabulated results are provided to treat the resulting probability integrals of the form ∫ 0 ∞ x n exp {−( βx + x 3)}d x.
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