Abstract
Epitaxial c-axis-oriented Bi3.15Nd0.85Ti3O12 (BNT) thin films with thickness ranging from 150to350nm were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. The top Pt electrode was deposited by sputtering to construct a capacitor Pt/BNT/SRO. The authors have evaluated the effective thickness (ti) and dielectric constant (εi) of interfacial layers at the Pt/BNT and BNT/SRO interfaces based on the optical refractive index of the BNT layer and the capacitance frequency as well as the current-voltage characteristics of the capacitors. Using a series capacitor model, they have found that the dielectric constant of bulk BNT and the ti∕εi ratio are 586 and 1.46nm, respectively. Knowing the optical dielectric constant (εopt) and the product of εoptti of BNT thin films, the authors have estimated that the effective thickness and dielectric constant of the interfacial layers are 20.1nm and 13.7, respectively.
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