Effective temperature of the non-equilibrium electrons in a degenerate semiconductor at low lattice temperature

Abstract

The energy balance equation for the electron–phonon system is recast taking the degeneracy of the carrier ensemble into account. The effect of degeneracy on the field dependence of the temperature of the non-equilibrium carriers has been studied by solving the same equation. The high field distribution function of the carriers is assumed to be given by the Fermi Dirac function at the field dependent carrier temperature. The distribution function has been approximated in a way that facilitates analytical solution of the problem without any serious loss of accuracy. The field dependence of the electron temperature thus obtained seems to be significantly different from what follows had the degeneracy not been taken into account. The agreement of the results obtained from the present analysis with the available experimental data for Ge and InSb are quite satisfactory. The scope of further refinement of the present theory is highlighted.