Abstract
Reduction of unintentional silicon impurity in GaInAs was obtained by using a SiC-coated graphite boat containing Ga-In source alloy materials. A maximum mobility of 2800 cm 2/(V·s) and a carrier concentration of 1.4 × 10 18 cm −3 were obtained at room temperature with a quartz boat. The addition of a small amount of dysprosium as a gettering material resulted in reducing the background concentration and also the mobility. However, use of a SiC-coated graphite boat resulted in an increase of the room temperature mobility to 5100 cm 2/(V·s) and a decrease in carrier concentration to 2.8 × 10 16 cm −3.
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