Abstract
It is shown that the electric field applied in the plane of two-dimensional hole layers not only excites the intrinsic spin currents, but also leads to a homogeneous spin polarization. Theoretical study of this phenomenon, taking into account both the anisotropy of the Luttinger Hamiltonian and the bulk inversion asymmetry effects for holes, is carried out for the quantum wells grown along [ 0 0 1 ] crystallographic direction. The examples of GaAs and Si layers are considered.
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