Abstract
Effective simulations of semiconductor superlattices are presented in the paper. The simulations have been based on the Wannier function method approach where a new algorithm, inspired by Büttiker probes, has been incorporated into determining the Green function procedure. The program is of a modular structure, and its modules can either work independently, or interact with each other following a predefined algorithm. Such structuring not only accelerates simulations and makes the transport parameters possible to initially assess, but also enables accurate analysis of quantum phenomena occurring in semiconductor superlattices. In this paper, the capabilities of type I superlattice simulator, developed earlier, are presented, with particular emphasis on the new block where the Fermi levels are determined by applying Büttiker probes. The algorithms and methods used in the program are briefly described in the further chapters of our work, where we also provide graphics illustrating the results obtained for the simulated structures known from the literature.
Highlights
Semiconductor superlattices (SL) are modular structures where nanometre layers of two different semiconductors or their alloys are arranged alternately
Despite the simple spatial geometry of the SL, the electron transport modelling in such structures has proven to be very difficult, as it requires considering many factors, such as the influence of the potentials from superlattice and the applied electric field alike, the impact of potentials derived from dopants, as well as interfaces’ roughness, and last but not least, electron scattering on both photons and phonons
The use of the Born’s approximation procedure (BAP) allows accurate calculations of transport parameters, is illustrated by the results shown in Figure 9, where the energy maps of k-resolved occupation taking into account the given types of electron scattering
Summary
Semiconductor superlattices (SL) are modular structures where nanometre layers of two different semiconductors or their alloys are arranged alternately They generate a periodic electrostatic potential, of which period (d) significantly exceeds the period (a) of the potential originating from atoms within the crystal lattice (see Figure 1). The models underwent many improvements, of which the approach to solve the Schrödinger equation with a rate equation method (RE) [7,8] was interesting. This method assumes the boundary conditions to have taken the form of hard walls at the edges of the structure composed of three consecutive periods of SL, and the solutions obtained for the central period to be representative of the whole
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