Abstract
The effective Richardson constant A* of a sputtered Pt-Si Schottky diode shows a large change with the thickness of a Pt-electrode film. For the purpose of investigating the cause of the change in A* with the Pt-film thickness, a 1000-Å-thick Pt film has been deposited by rf sputtering onto Si substrates which have been heated to various temperatures between room temperature and 500 °C. The barrier height ΦB and the effective Richardson constant A* for these Pt-Si contacts have been investigated photoelectrically. As a result, it has been found that the change in A* with the thickness of a sputtered Pt film is due to the rise of temperature at the Pt-Si interface during sputtering. From the concentration profiles of Pt and Si atoms near the Pt-Si interface by using Auger electron spectroscopy, we can attribute the dramatic change in A* to the formation of a Pt silicide layer during sputtering.
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