Abstract
The two unique features of the plasmonic isolator and the plasmonic modulator are their small size of about 10-100 μm and their technological compatibility with the Photonic Integrated Circuits (PIC). These features make them attractive as components for a denser and smaller PIC. An additional advantage of the plasmonic modulator is its ultra-fast operational speed, which exceeds 200 GHz. We have developed and experimentally demonstrated two fabrication technologies, which allow a substantial decrease of both the plasmonic propagation loss and the coupling loss. The developed technologies are based on the optimization of the out-of-plane confinement and the in-plane confinement for a surface plasmon. A low propagation loss of 0.7 dB/μm for a surface plasmon in a Co/TiO<sub>2</sub>/SiO<sub>2</sub> plasmonic structure on a Si substrate and a moderate coupling efficiency of 4 dB per facet between a Co/TiO<sub>2</sub>/SiO<sub>2</sub> and a Si nanowire waveguide were achieved.
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