Abstract
The paper presents an analysis of the carrier diffusion and surface recombination processes in gap-structure MIC devices at quasi-CW laser excitation. Quite simple analytical expressions are obtained for the effective laser-induced photoconductivity and the plasma penetration depth. The formulas have been confirmed by experiment, and allow application of the well-known lumped element analysis of the gap region (often used in the field of optoelectronic microwave switching) even under quasi-CW or pure-CW excitation condition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
