Abstract
The effect of an intermittent SiO2 strip process in multi-step oxidation on the physical properties of a condensed Ge-on-insulator (GeOI) layer was investigated to realize a higher Ge concentration. By utilizing an intermittent SiO2 strip during the condensation process, we demonstrated a 21-nm GeOI layer with a Ge concentration of higher than 95 at% and confirmed that total process time to reach a Ge concentration higher than 95 at% could be reduced by maximum of 77% compared to a conventional process without the SiO2 strip. This was attributed to the intermittent SiO2 strip process causing Ge atoms to be volatized in the O2 environment during the condensation process. The intermittent SiO2 strip is essential to achieve a Ge concentration higher than 95 at% and is very effective in realizing a high Ge concentration and a thick Ge-on-insulator substrate.
Published Version
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