Abstract
Effective mobility of electrons in the channel of InP metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated on semi-insulating (SI) or p-type InP substrates was measured in terms of surface electron density and temperature and found to be in fairly good agreement with a model based on the theoretical values calculated by three scattering mechanisms: polar optical-phonon scattering, delta-function-like potential scattering, and screened Coulomb scattering. The effective mobility of electrons in the channel of MISFETs on p-type substrates was lower than that on SI substrates, and this was attributed to a higher density of Coulomb scattering centers in the channel of MISFETs on p-type substrates.
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