Abstract
The electrical performance of Si-doped n+-n GaAs homojunction barriers grown by molecular-beam epitaxy (MBE) is characterized and analyzed. We employed a successive etch technique to study hole injection currents in GaAs n+-n-p+ solar cells. The results of the analysis show that minority-carrier holes in our MBE-grown material have a mobility of 293 cm2/V s for an n-type Si-doping level of 1.5×1016 cm−3 at 300 K. The interface recombination velocity for these homojunction barriers is estimated to be less than 1×103 cm/s, and it appears to be comparable to that recently observed for Si-doped n+-n GaAs homojunction barriers grown by metalorganic chemical vapor deposition. We present evidence that these n+-n GaAs homojunctions, unlike p+-p GaAs homojunctions, are almost as effective as AlGaAs heterojunctions in minority-carrier confinement, and that their electrical performance is not degraded by heavy doping effects.
Highlights
High-efficiency GaAs solar cens routinely employ high-low junctions for confining minority carriers. 12 Depending on whether the cell is n+-p or p+ on, the high-low junction is either a p + -p or n. + -n homojunction
The electrical performance of Si-doped n + -n GaAs homojunction barriers grown by molecular-beam epitaxy (MBE) is characterized and analyzed
The interface recombination velocity for these homojunction barriers is estimated to be less than 1X 103 cm/s, and it appears to be comparable to that recently observed for Si-doped n-'- -n GaAs homojunction barriers grown by metalorganic chemical vapor deposition
Summary
Effective minority‐carrier hole confinement of Si‐doped, n+‐n GaAs homojunction barriers. Follow this and additional works at: https://docs.lib.purdue.edu/ecepubs Part of the Electrical and Computer Engineering Commons. E.; Melloch, Michael R.; and Lundstrom, Mark S., "Effective minority‐carrier hole confinement of Si‐doped, n+‐n GaAs homojunction barriers" (1989). The electrical performance of Si-doped n + -n GaAs homojunction barriers grown by molecular-beam epitaxy (MBE) is characterized and analyzed. We present evidence that these n+n GaAs homojunctions, unlike p + -p GaAs homojunctions, are almost as effective as AIGaAs heterojunctions in minority-carrier confinement, and that their electrical performance is not degraded by heavy doping effects
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