Abstract
Measurements of the electron transport in double-barrier AlAs/GaAs/AlAs heterostructures grown on (001)-and (311)-oriented substrates are carried out. The results obtained provide information on the anisotropy of the electron subbands in the GaAs quantum wells (QWs) of these heterostructures. The in-plane dispersion relation E(k‖) is determined using magnetotunneling spectroscopy with a magnetic field B applied parallel to the QW layer (i.e., normally to the tunneling current). The amplitudes and bias positions of the resonance peaks in the tunneling current are found to be sensitive both to the magnitude and orientation of the magnetic field with respect to the crystallographic axes in the QW plane. Insertion of an InAs monolayer at different positions in the GaAs QW enables the modification of electron wave functions, which is used to study the nature of electron-subband anisotropy in this type of QW.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
