Abstract
The transconductance and effective Landé g^* factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the g^* factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of g^* factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin–orbit coupling defined by the Kane–Mele form of interaction.
Highlights
We simulate experimental path of g∗ measurements to give exact explanation what uncertainities can occur during the analysis of the experimental data, we present full description from the theoretical calculations on how to interpret the armchair valley/subbands in the transconductance map, and how to explain differences of armchair/zigzag transconductance in terms of spin–orbit interaction (SOI) impact
In the zigzag case with NO SOI ( HSO = 0 ) we observe spin-degenerate subbands at B = 0 (Fig. 3a) for both valleys K′ and K, while this degeneracy is lifted upon applying an external magnetic field perpendicular to the sample (Fig. 3c for Bz = 2 T) that slightly splits the spin-states and shifts the subbands higher for K and lower for K′
In the case with SOI taken into consideration (Fig. 6a, b) we observe twice more subbands that emerge from splitting caused by the Zeeman-like part of the intrinsic SO coupling
Summary
The transconductance and effective Landé g∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The gate-to-energy conversion factor can be determined for each subband from the slope of the transconductance lines in B = 0 according to the formula: ξm where the 1/2 factor results of source-drain potential shift that is equal to half of the applied bias: 1/2 VSD .
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