Abstract
As the application requirements of semiconductor lasers continue to increase, severe challenges are brought to the reliability of semiconductor lasers. In order to promote the study of laser failure, this paper proposes an effective failure analysis method for packaged semiconductor lasers with a simple sample preparation and home-made photon emission microscopy (PEM) system. The new simple sample preparation process for failure analysis is presented and the necessary polishing fixture is designed so that sample can be obtained without expensive and complex micro-/nano-processing. Two types of home-made PEM experimental systems were established for observing the failure from the front facet and active region of semiconductor lasers. Experimental results showed that, with the proposed sample preparation flow, the home-made PEM experimental system effectively observed the leakage defects from the front facet and dark spot defects (DSDs) in the active region of semiconductor lasers. The method can help researchers and laser manufactures to perform effective failure analysis of packaged semiconductor lasers.
Highlights
Since the 1960s, the successive development of semiconductor laser diodes (LDs) [1]and optical fiber technology [2] has promoted the arrival of the information age and social progress
Lasers, and experimental results showed that the leakage defects judged by the output light from the front facet [28] and dark spot defects in the active region of semiconductor lasers can be effectively observed by the proposed failure analysis method
We took the 1310 nm distributed feedback (DFB) transistor outline (TO) packaged semiconductor lasers as objectives, which is provided by the corporation
Summary
Since the 1960s, the successive development of semiconductor laser diodes (LDs) [1]. and optical fiber technology [2] has promoted the arrival of the information age and social progress. DLDs caused by catastrophic optical damage (COD) [19] Their sample preparation method for EL mainly adopts wet or dry etching to form the light-transmitting window of the substrate so as to observe the defect distribution in the active area of the semiconductor laser under the excitation of an external current. This method is expensive, complicated, and only for chip-level semiconductor lasers, but it is not applicable to packaged semiconductor lasers. Lasers, and experimental results showed that the leakage defects judged by the output light from the front facet [28] and dark spot defects in the active region of semiconductor lasers can be effectively observed by the proposed failure analysis method.
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