Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy

Abstract

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er3+ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er3+ ions in the first excited state 4I13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er3+ electroluminescence.