Abstract
The effective electromechanical coupling coefficient has been studied for thin film bulk acoustic wave resonators (TBARs) with fundamental frequencies between 200 and 400 MHz. An increase in the effective electromechanical coupling coefficient ( kt TBAR 2) is observed with the increase in the ZnO thickness ratio: thickness of ZnO thin film and that of TBAR. In case where the ZnO thickness ratio is >70%, kt TBAR 2 becomes a constant of 3.4%. The discrepancy between the experimental and the calculated kt TBAR 2 is remarkable when the membrane of the TBAR warps. It was found that the ZnO thickness ratio is a very important parameter for adjusting the TBAR characteristics to each application.
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