Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

Abstract

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ∼10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. These results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.