Abstract
The paper presents the results of an experimental study of heating molybdenum and silicon substrates under the conditions of gas-jet deposition of diamond structures using the precursor gases of a microwave discharge to activate. A cooled substrate holder using a metal melt to improve heat removal by reducing the thermal resistance between the substrate and the substrate holder has been developed. The use of the melt allowed lowering the temperature of the silicon substrate under the conditions of gas-jet deposition to a level that ensures the preservation of its structure. The developed substrate holders were used to carry out gas-jet synthesis of diamond structures on molybdenum and silicon substrates.
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