Abstract
Abstract Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer using a radio frequency sputtering system while the PS layer was prepared by a photoelectrochemical etching method. The ZnO/PS layers were found to be an excellent antireflection coating (ARC), exhibiting exceptional light trapping at wavelengths ranging from 400 to 1000 nm because of their lowest effective reflectance. This, in turn, leads to increase the efficiency of solar cell to 18.15%. The ZnO film was highly oriented with the c -axis perpendicular to the PS layer. The average crystallite size of the PS and ZnO/PS layers were 17.06 and 17.94 nm, respectively. Photoluminescence emission peaks proved the nanocrystalline characteristic of the PS layer and the ZnO film. Raman measurements of the ZnO/PS layers were determined at room temperature and indicate that a high-quality ZnO nanocrystalline film was formed. In the current paper, ZnO/PS ARC layers are attractive and offer a promising technique to produce high-efficiency, low-cost solar cells.
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