Abstract
The VLT technique features for its irregular thickness of drift region and therefore realize the even surface electric field even with a uniformly doped drift region. However, the sophisticated structure of the drift region also making 2-D methods impractical in both modeling and explaining VLT's physical nature. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but effective 1-D modeling methodology is proposed to provide physical insight into the VLT technique. The VLT-ECP concept indicates that by physically removing the region that above Charge Appointment Line (CAL), the charge contributes to the lateral depletion can be reduced to zero leading to an even surface electric field. Further, an optimization criterion is proposed to provide useful guidance for the designing of VLT lateral power devices in practice. The comparison between the analytical results obtained by the proposed model and TCAD simulations verified the veracity and effectiveness of the proposed methodology.
Highlights
The development of lateral power device has made revolutionary progress as the introduction of Reduce Surface Electric Field (RESURF) technique, which improves the lateral breakdown voltage (BV) with the help of 2-D coupling effect between lateral and vertical structure [1]–[4]
The results obtained by the proposed model are found to be sufficiently accurate comparing with simulation results by MEDICI, technology computer-aided design (TCAD) tool
In order to provide a theoretical window for optimizing the drift region doping dose(Q = Nd × ts) of a Variable of Lateral Thickness (VLT) lateral power device, in this paper, we propose an optimized doping dose(ODD) criterion whose limits are determined by vertical and lateral BVs
Summary
The development of lateral power device has made revolutionary progress as the introduction of Reduce Surface Electric Field (RESURF) technique, which improves the lateral breakdown voltage (BV) with the help of 2-D coupling effect between lateral and vertical structure [1]–[4]. The most direct approach is to alter the charge distribution (Q(x) = Nd(x) × ts(x)) of drift region [4]–[8] This concept further stimulates the revolutionary techniques such as Variable of Lateral Diffusion (VLD) and Variable of Lateral Thickness (VLT). Both the VLD and VLT are featured as their ability to achieve an even surface electric field profile and the most desirable lateral BV characteristic [10]–[12]. The fabrication of VLD devices requires perforated mask layout and long-time/high- temperature annealing which increases costs and reduces yields [7], [9] To avoid those drawbacks of VLD, VLT technique has been introduced which alter the drift region lateral charge distribution via variation of its thickness rather than doping. The simulation models used in MEDICI are CONSRH, AUGER, BGN, FLDMOB, IMPACT.I and CCSMOB
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
