Effective Channel Mobility of Poly-Silicon Thin Film Transistors

Abstract

Effective channel mobilities of polycrystalline silicon (poly-Si) thin film transistors (TFTs) have been experimentally extracted by drain conductance and channel charge measured at linear region. It is demonstrated that conventionally followed device field effect mobility is largely deviated from effective channel mobility. Based on a mobility model including both barrier controlled carrier conduction and effective transverse field controlled mobility degradation, our experimental channel mobility data can be reproduced for both low temperature and high temperature recrystallized poly-Si TFTs, without introducing any empirical or artificial factors