Abstract
The effective carrier density in porous silicon carbide is measured to be 40 times less than that in the starting material. An idea is proposed which relates the reduction in carrier density to some compensation effect. It is proposed that donor dopants are compensated by deep-level surface-localized, acceptor-like states appearing due to the large internal surface area developed as a result of pore formation in crystalline SiC. The estimated density of trapped electrons per unit internal surface area, 5 × 1012 cm−2, is quite reasonable for the density of deep-level states at the SiC surface.
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