Abstract
We have investigated the effective area involved in Split-C(V) measurements performed in Pseudo-MOSFET configuration. This area cannot be directly determined from dimensional relations and must be extracted according to experiments. Firstly, we have examined the variation of this area with the frequency of the AC signal used to generate capacitance curves, and with the configuration parameters of the experimental setup (the number of the needles and the distance between them). A model to evaluate the effective area in any characterization scenario has been proposed and validated with systematic measurements. Finally, we discussed the carrier density determination by using the active area derived from Split-C(V) measurements.
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