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Abstract
To obtain quantitative depth information from hard X-ray photoemission spectroscopy, the effective attenuation length (EAL) is required. In this paper, the EAL was determined for LaLuO3 for electron kinetic energies between 7 and 13 keV. As a result, the EAL is in the range of 100–150 Å for the investigated photon energies. In addition, higher binding energy orbitals of La and Lu were measured and are discussed. LaLuO3 is a promising high-k dielectric for future nano-scaled MOS devices.
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