Abstract
In this brief, obtained results of the electrothermal analysis of multifinger power high-electron mobility transistors (HEMTs) are presented. The analysis of thermal and electrical behavior is supported by effective 3-D electrothermal device simulation method developed for Synopsys TCAD Sentaurus environment using mixed-mode setup. The effects of multifinger HEMT structure metallization layout design are described and studied. Simulation results depict the significant effect of metallization geometry on the electrothermal properties and behavior of the power multifinger HEMTs.
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