Abstract
The ∼3.9 μm mid-infrared (MIR) laser based on high concentration Ho3+ doped fluoride glass possesses unique advantages, but its low thermal stability does not meet the requirements of the MIR laser technology for optoelectronic device materials. In this paper, fluorotellurate glass with TeO2 and high doping concentration of Ho3+ was prepared. The excellent thermodynamic properties (ΔT = 108 °C) and low phonon energy (799 cm−1) render the matrix a promising candidate for the development of laser gain medium doped with Ho3+: ∼3.9 μm. The calculated theoretical parameters and the measured spectral information confirm that the scheme of ∼3.9 μm luminescence by high doping of Ho3+ in the fluorotellurate glass matrix is reasonable and effective.
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