Effection of Additive on Aluminum Nitride Nano-Wire Synthesis by Double Decomposition Method

Abstract

An method for making AlN(aluminum nitride) nanowires by double decomposition, and the effection of additives was described. Future more, the growth mechanism of AlN nanowire synthesis with addictive were analyzed. AlN nanowire were synthesis by he AlCl3 and NaN3 in stainless steel cauldron without solvent and using Mg and Zn as additive. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study characters of the AlN nanowire. It is shown that the process can produce AlN nanowire with mean diameters ranging from 50 to 100 nm at 450°C. The additive has effective facilitated on the synthesis of aluminum nitride nanowires, can improve the properties of aluminum nitride nanowire, minish the average diameter of aluminum nitride nanowires.