Abstract
A cross‐point array structure is a promising structure in high‐density memory applications. However, a cross‐point array has sneak current paths from selected cells to neighboring unselected cells, and a selector device is required to suppress the sneak current issue. Therefore, the capability of modulating the threshold voltage is one of the essential elements facilitating reliable operation of the cross‐point array structure. Herein, the effect of Zr doping on the threshold switching properties of amorphous Ga2Te3 (a‐Ga2Te3) thin films is investigated with optical and electrical properties and the thermal stability of amorphous phase. Zr‐doped a‐Ga2Te3 thin films increase the threshold and holding voltages with improved thermal stability. Moreover, Zr doping reduces the leakage current of the Ga2Te3 selector device, which is beneficial to implement the cross‐point array of high density. Regarding the endurance, Zr‐doped a‐Ga2Te3 thin films show stable operation until 109 cycles.
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