Abstract
The ZnO–SnO2 nanocomposite films, with Zn/Sn molar ratio from 1:1 to 5:1, were fabricated by sol–gel spin coating and annealed under 500°C. The films are composed of hexagonal wurtzite ZnO and tetragonal rutile SnO2 without compound impurities. With increasing the Zn/Sn molar ratio, the growth of SnO2 grain is inhibited, while that of the ZnO is promoted. The film transmittance decreases for higher Zn/Sn ratio due to scattering losses caused by pinhole and island growth in the film surface. We show that the film electrical property can be well engineered by embedding SnO2 to ZnO matrix. First-principles calculation shows that more energy levels are involved between the Fermi level and valence band maximum with increasing the Sn content, and thus the carrier conductive is improved.
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