Effect of ZnS, iZnO, dZnO and Cu(In,Ga)Se2 thickness on the performance of simulated Mo/Cu(In,Ga)Se2/ZnS/iZnO/dZnO solar cell

Abstract

In this paper, Mo/Cu(In,Ga)Se2/ZnS/iZnO/dZnO solar cell is simulated and optimized by studying the effect of layers thickness on solar cell efficiency using Silvaco ATLAS software. The input simulation parameters are: dielectric permittivity $$\left(\upvarepsilon \right)$$ , band gap energy $$\left( {E_{g} } \right)$$ , electron affinity $$\left(\upchi \right)$$ , conduction band effective density of states $$\left( {N_{c} } \right)$$ , valence band effective density of states $$\left( {N_{v} } \right)$$ . The output parameters used to find the optimum values of the layers thickness are the short circuit current density $$\left( {I_{sc} } \right)$$ , open circuit voltage $$\left( {V_{oc} } \right)$$ , maximum power $$\left( {P_{max} } \right)$$ , fill factor $$\left( {\text{FF}} \right)$$ , efficiency $$\left(\upeta \right)$$ , Current–voltage (I–V) and power–voltage (P–V) characteristics.