Abstract
Proper contact and band alignment across the heterojunction interface is critical to the performance of hybrid pi-conjugated polymer-nanostructured metal oxide photovoltaic devices. We investigated the effect of ZnO surface processing on ZnO/poly(3-hexylthiolphene) device performance. Devices in which the ZnO films/nanorods were heated at 150 °C in air exhibited an open circuit voltage ∼200 mV higher than devices with ZnO treated by UV/ozone. We conclude that the differences observed in the two types of devices predominantly arise from changes in interfacial dipoles, and intermediate materials processing can be critical to solar cell performance.
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