Effect of ZnO buffer layer thickness on the epitaxial growth of GaN by reactive magnetron sputtering

Abstract

Epitaxial GaN films were grown on sputtered ZnO buffer layers of thickness 25–200nm over c-plane sapphire by reactive sputtering of GaAs in nitrogen at 700°C. The epitaxial quality and microstructure have been studied by high resolution X-ray diffraction in phi (ϕ) and omega (ω) scan geometries. The surface morphology of epilayers was studied by atomic force microscopy and scanning electron microscopy and their crystalline quality was assessed by Raman spectroscopy. These studies have shown that ZnO buffer layers of 50–100nm facilitate growth of GaN epilayers of high crystalline quality, compared to those grown on thinner and thicker ZnO buffer layers.