Abstract
The effect of ZnO buffer layer on the growth and dielectric properties of Bi1.5Zn1Nb1.5O7 (BZN) thin films deposited on Pt-Si substrate using pulsed laser ablation was studied in detail. An intermediate ZnO buffer greatly enhanced the crystalline quality as well as the dielectric properties of BZN thin films. Variation of Raman spectra with oxygen partial pressure was studied in detail. The presence of the ZnO buffer layer has increased the dielectric constant as well as tunability. This enhancement in dielectric properties may be attributed to the increased crystallinity and oxygenation of the BZN thin films in the presence of a semiconducting buffer layer. The directly stacked structure of the fabricated device with the top dielectric oxide thin films as a gate oxide and the semiconducting buffer layer as the channel layer can be used as a potential candidate for thin film field effect transistor applications.
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