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Abstract
Zinc oxide (ZnO) thin films were deposited onto glass substrates by reactive radiofrequency (RF) magnetron sputtering using a metallic zinc target. Optical emission spectroscopy (OES) was used to monitor and control the Zn sputtering rate for the deposition of the ZnO films. Film thicknesses ranged from 350 to 750 nm. Optical transmittances greater than 80% were observed in the wavelength interval from 450 nm to 650 nm. The energy gap of the films remained constant at (3.28 ± 0.01) eV. The surface morphology was found to be homogeneous with well-distributed structures. Surface roughness was dependent on the Zn sputtering rate, indicating that greater densities of Zn atoms increase the surface diffusion. X-ray diffraction (XRD) analysis showed that the ZnO films were polycrystalline with a hexagonal wurtzite structure and preferential growth along the (002) plane.
Highlights
Thin films of transparent conductive oxides, known as TCOs (Transparent Conducting Oxides), have several applications in optoelectronic devices
Several techniques have been used for the synthesis of the zinc oxide (ZnO) thin films such as thermal evaporation [3], laser ablation [4], metal organic chemical vapor deposition (MOCVD) [5], molecular beam epitaxy [6] and magnetron sputtering [7]
In this study we investigated the effect of the rate of sputtering on ZnO thin films
Summary
Thin films of transparent conductive oxides, known as TCOs (Transparent Conducting Oxides), have several applications in optoelectronic devices. These thin films can be applied especially in organic light emitting diodes (OLEDs), heat mirrors, solar cells and thin film transistors (TFTs) [1]. Several techniques have been used for the synthesis of the ZnO thin films such as thermal evaporation [3], laser ablation [4], metal organic chemical vapor deposition (MOCVD) [5], molecular beam epitaxy [6] and magnetron sputtering [7]. The surface texture, optical and structural properties were systematically investigated as a function of the zinc sputtering rate
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