Abstract
Reduction processes of copper oxide supported both on tetragonal and on monoclinic zirconia were investigated by means of hydrogen temperature-programmed reduction (H 2-TPR). Results show that there exists apparent difference between the reduction behaviour of highly dispersed CuO supported on these two-phase zirconia; while two reduction peaks appear in the H 2-TPR profile of monoclinic zirconia-supported monolayer CuO, only one reduction peak at low temperature is developed for tetragonal zirconia-supported counterpart.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
